Product Summary

VUO190-16N07 Diode Rectifier Bridge Single 1.6KV 240A 5-Pin PWS-E-1

The features of VUO190-16N07can be summarized as (1)Features / Advantages:; (2)● Package with DCB ceramic; (3)● Improved temperature and power cycling; (4)● Planar passivated chips; (5)● Very low forward voltage drop; (6)● Very low leakage current

 

Parametrics

The features of VUO25-08NO1can be summarized as (1)VRSM V; (2)TV J = 25°C 200; (3)VR = V T V J = °C 3.5 mA; (4)I F = A T V J = 25°C; (5)V; (6)T C = 1 1 0 °C; (7)Ptot T C = 25°C 310 W; (8)R 0.15 K/W; (9)80; (10)1600; (11)max. non-repetitive reverse blocking voltage; (12)reverse current; (13)forward voltage drop; (14)total power dissipation; (15)Conditions Unit; (16)1.36; (17)TV J = 25°C; (18)150; (19)VF0 T = °C 0.74 V VJ 150; (20)rF 2.4 mΩ; (21)I F = A T V J = °C 0.96 V; (22)V; (23)80; (24)1.33; (25)I F = 2 4 0 A; (26)I F = 2 4 0 A; (27)threshold voltage; (28)slope resistance; (29)for power loss calculation only; (30)μA; (31)125; (32)VRRM max. repetitive reverse blocking voltage TV J = 25°C 1600 V; (33)CJ junction capacitance VR = 4 0 0 V; f = 1 MHz T V J = 25°C 133 pF; (34)IFSM t = 10 ms; (50 Hz), sine TV J = 45°C max. forward surge current; (35)TV J = 1 5 0 °C; (36)I2t value for fusing T = 45°C; (37)T = 1 5 0 °C; (38)VR = 0 V; (39)VR = 0 V; (40)V = 0 V; (41)V = 0 V; (42)t = 8,3 ms; (60 Hz), sine; (43)t = 10 ms; (50 Hz), sine; (44)t = 8,3 ms; (60 Hz), sine; (45)t = 10 ms; (50 Hz), sine; (46)t = 8,3 ms; (60 Hz), sine; (47)t = 10 ms; (50 Hz), sine; (48)t = 8,3 ms; (60 Hz), sine; (49)VJ; (50)R; (51)VJ; (52)R; (53)T = °C