Product Summary

BSM 100 GAL 120 DN2  Trans IGBT Module N-CH 1.2KV 150A 7-Pin

 

NS is a professional distributor for famous brand high-power and power conversion module

Brand Include: Darlington, IGBT, intelligent, IPM, power conversion DC-DC, AC-DC

Applications: Frequency conversion equipment , motor speed regulation , The ship naval, aerospace, Port handling, Airport facilities, Mining and drilling, welding and other network communications and Heavy machinery Industry

Advantage brand: TOSHIBA, MITSUBISHI, HITACHI, FUJI, EUPEC, SanRex, VICOR, SEMIKRON, MOTOROLA, IR, ST and so on; include: smart, IGBT, IPM, GTR,

DC-DC, AC-DC rectifier and power supply and other modules.

Our direct supply channels,  closed cooperation  with  manufacturers and agents  reducing the flow of product .

We will do high quality control , inspection , testing of the parts no worries for you after buying

By the way We offer thoughtful, multi-faceted, all –round after sales service

 

Please note before purchasing

1.   We will offer the module’s picture to  customer before the shipment , please check it carefully

2.   Please review the pictures, to ensure the model, suffix, package, appearance, etc. can meet your requirements . Only after get your confirmation then we will arrange  the shipment  . We can not accept any return just as all confirmed issues changed again

3. Our direct supply channels,  closed cooperation  with  manufacturers and agents  reducing the flow of product .

We will do high quality control , inspection , testing of the parts no worries for you after buying

By the way We offer thoughtful, multi-faceted, all –round after sales service

Any questions just feel free to contact with our sales person

 

Parametrics

Type VCE IC Package Ordering Code
BSM 100 GAL 120 DN2 1200V 150A HALF BRIDGE GAL 2 C67076-A2012-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kW
VCGR
1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
100
150
A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
200
300
Power dissipation per IGBT
TC = 25 °C
Ptot
800
W
Chip temperature Tj + 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ￡ 0.16 K/W
Diode thermal resistance, chip case RthJCD ￡ 0.3
Diode thermal resistance, chip-case,chopper RTHJCDC ￡ 0.25
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56