(Hong Kong)
Product Summary
IGBT Power Module
Preliminary data
? Low Loss IGBT
? Single switch
? Including fast free-wheeling diodes
? Package with insulated metal base plate
Parametrics
The absolute maximum ratings of BSM400GA120DLare (1)The absolute maximum ratings of BSM400GA120DL are (1)Parameter Symbol Values Unit; (2)Collector-emitter voltage VCE 1200 V; (3)Collector-gate voltage RGE = 20 kW VCGR 1200; (4)Gate-emitter voltage VGE ㊣ 20; (5)DC collector current TC = 25 ～C TC = 90 ～C IC 400 650A; (6)Pulsed collector current, tp = 1 msTC = 25 ～CTC = 90 ～C; (7)ICpuls800- 1300; (8)Power dissipation per IGBT TC = 25 ～CPtot2700W; (9)Chip temperature Tj + 150 ～C; (10)Storage temperature Tstg-40 ... + 125; (11)Thermal resistance, chip case RthJC ㏒ 0.045 K/W; (12)Diode thermal resistance, chip case RthJCD ㏒ 0.09; (13)Insulation test voltage, t = 1min. Vis2500 Vac; (14)Creepage distance - 20 mmClearance - 11; (15)DIN humidity category, DIN 40 040 - F sec; (16)IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 BSM400GA120DL |
Other |
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Data Sheet |
Negotiable |
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BSM400GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
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BSM400GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 400A SINGLE |
Data Sheet |
Negotiable |
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